Invited presentations
David A. J. Moran, Stephen Russell, Salah Sharabi, Alex Tallaire, Dongchen Qi, Andrew Wee
Recent Advances in Hydrogen-terminated Diamond FET Technology
UK Semiconductors 2013, Sheffield, UK, July 2013
D. A. J. Moran
Diamond – The Ultimate Material for Future High Power Electronics?
CMOS Emerging Technologies Research Symposium, Whistler, Canada, July 2013
Stephen Russell, Salah Sharabi, Alex Tallaire, Dongchen Qi, Andrew Wee, David A. J. Moran
Recent progress and future challenges in hydrogen-terminated diamond field effect transistor technology
SBDD XVIII – Diamond Workshop, Hasselt, Belgium, February 2013
D. A. J. Moran
Surface Channel Diamond Field Effect Transistors: Recent Progress and Future Challenges
Materials for Tomorrow Workshop, Singapore, December 2012
David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Short gate length surface-channel diamond transistors
HeTech European Workshop, Lille, France, November 2011
D. A. J. Moran, D. A. MacLaren, S. Porro, R. Hill, H. McLelland, P. John, J. I. B. Wilson
Characterisation and Inspection of 50nm gate-length hydrogen terminated diamond Field Effect Transistors.
MRS Fall Meeting, Dec 2010 proceedings
Journal Publications and Conference Presentations
Stephen A. O. Russell, Liang Cao, Dongchen Qi, Alexandre Tallaire, Kevin G. Crawford, Andrew T. S. Wee and David A. J. Moran
Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
Applied Physics Letters, Volume 103, Issue 22, 202112, November 2013
Kevin G. Crawford, Stephen A. O. Russell, Dongchen Qi, Liang Cao, Alex Tallaire, Andrew T. S. Wee, David A. J. Moran
Advancing Surface Transfer Doping of Hydrogen Terminated Diamond via Inorganic Materials
Hetech European Workshop, Glasgow, UK, September 2013
Andrew IM Greer, Krishna Seunarine, Ali Z Khokhar, Ian MacLaren, Alistair S Brydone, David AJ Moran, Nikolaj Gadegaard
Increased efficiency of direct nanoimprinting on planar and curved bulk titanium through surface modification
Microelectronic Engineering, Volume 112, December 2013, Pages 67–73
S.A.O. Russell, S. Gupta, H. Gleskova, A. Tallaire, D.A.J. Moran
The impact of processing on hydrogen-terminated diamond TLM structures exposed to atmosphere and coated with F16CuPc
SBDD XVIII “Diamond Workshop”, Hasselt, Belgium, March 2013
Stephen A. O. Russell, Salah Sharabi, Alex Tallaire and David A. J. Moran
Hydrogen-Terminated Diamond Field-Effect Transistors with Cutoff Frequency of 53 GHz
IEEE Electron Device Letters, Vol. 33, No. 10, October. 2012 p. 1471 – 1473
David A. J. Moran, Stephen A. O. Russell, Salah Sharabi and Alexandre Tallaire
High Frequency Hydrogen-Terminated Diamond Field Effect Transistor Technology
IEEE 12th International Conference on Nanotechnology, Birmingham, UK, August 2012.
A. I. M. Greer and D. A. J. Moran
Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond
Diamond and Related Materials, 29, July 2012, p. 13 – 17.
Stephen A.O. Russell, Salah Sharabi, Alex Tallaire, Helen McLelland and David A.J. Moran
Diamond Field Effect Transistors
ARMMS RF & Microwave Society conference, Oxfordshire, UK, April 2012
A. I. M. Greer, K. Seunarine, A. Z. Khokhar, X. Li, D. A. J. Moran and N. Gadegaard
Direct nano-patterning of commercially pure titanium with ultra-nanocrystalline diamond stamps
Physica Status Solidi (a), 209, No.9, June 2012, p. 1721 – 1725.
S.A.O. Russell, S. Sharabi, D. MacFarlane, R. Caterino, J.A. Garrido, D.A.J. Moran
A comparison between de-embedding strategies for the extraction of the RF performance of hydrogen-terminated diamond FETs
SBDD XVII “Diamond Workshop”, Hasselt, Belgium, March 2012
A.I.M. Greer, K. Seunarine, A.Z. Khokhar, X. Li, D.A.J. Moran, N. Gadegaard
Direct nano-patterning of commercially pure titanium with ultra-nanocrystalline diamond stamps
SBDD XVII “Diamond Workshop”, Hasselt, Belgium, March 2012
A.I.M. Greer, D.A.J. Moran
The effect of charge dissipation layer thickness on e-beam feature size for polycrystalline diamond
SBDD XVII “Diamond Workshop”, Hasselt, Belgium, March 2012
D. A. J. Moran, D. A. MacLaren, S. Porro, H. McLelland, P. John, J. I. B. Wilson
Processing Of 50nm Gate-length Hydrogen Terminated Diamond FETs for High Frequency and High Power Applications
Microelectronic Engineering, Volume 88, Issue 8, August 2011, Pages: 2691-2693
David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Intrinsic DC operation and performance potential of 50 nm gate length hydrogen-terminated diamond field effect transistors.
UK Diamond Research Conference, Warwick, U.K, July 2011
David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Intrinsic DC Operation and Performance Potential of 50nm Gate Length Hydrogen-terminated Diamond Field Effect Transistors
Device Research Conference, Santa Barbara, CA, USA, 2011 (p. 137 – 138)
David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Scaling of hydrogen-terminated diamond FETs to sub-100 nm gate dimensions
IEEE Electron Device Letters, Vol. 32, No. 5, May. 2011 p. 599 – 601
David A. J. Moran, Oliver J. L. Fox, Helen McLelland, Stephen Russell, Paul W. May
Inspection of Intrinsic Operation and DC Performance of 50nm Gate Length Hydrogen-Terminated Diamond Field Effect Transistors using an optimised fabrication process.
SBDD XVI “Diamond Workshop”, Hasselt, Belgium, February 2011
D. A. J. Moran, D. A. MacLaren, S. Porro, R. Hill, H. McLelland, P. John, J. I. B. Wilson
Development and Operation of 50nm Gate Length Hydrogen Terminated Diamond Field Effect Transistors.
UK Diamond Research Conference, Warwick, U.K, July 2010
D.A.J. Moran, S.Porro, D. MacLaren, R. J. Hill, J. I. B. Wilson
Sub-100nm Gate-Length hydrogenated diamond FETs.
UK Semiconductors Conference, Sheffield, U.K, July 2009